Is product screen enough to guarantee low failure rate for the customer?

Author

Ruprecht, Michael W. ; La Rosa, Giuseppe ; Filippi, Ronald G.

Author_Institution

Infineon Technol., Essex Junction, VT, USA

fYear

2001

fDate

2001

Firstpage

12

Lastpage

16

Abstract

This paper shows the importance in advanced submicron CMOS technologies of an in-line product monitoring process optimized to screen defects and discover wearout mechanisms. Standby current failures from DRAM modules during accelerated product stresses caused by PMOSFET off conducting hot carrier damage is an observed device wearout mechanism which is not detected by commonly used product defect screens. A product screening strategy that takes into account the technology limitations and product stress results is required

Keywords

CMOS integrated circuits; failure analysis; hot carriers; integrated circuit reliability; integrated circuit testing; life testing; production testing; CMOS technologies; DRAM modules; PMOSFET off conducting hot carrier damage; accelerated product stresses; defect screening; device wearout mechanism; failure rate; in-line product monitoring process; product defect screens; product screening; product screening strategy; product stress; standby current failures; technology limitations; wearout mechanisms; Acceleration; CMOS process; CMOS technology; Condition monitoring; Implants; MOSFET circuits; Process control; Stress; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922874

Filename

922874