DocumentCode
3098809
Title
Analysis of erratic bits in flash memories
Author
Chimenton, Andrea ; Pellati, Paolo ; Olivo, Piero
Author_Institution
Dipartimento di Ingegneria, Ferrara Univ., Italy
fYear
2001
fDate
2001
Firstpage
17
Lastpage
22
Abstract
This work presents experimental results concerning erratic behavior in flash memories obtained by tracking the threshold voltage dynamics during any single erase operation and providing a deeper insight into their physical nature. The particular shape of the experimental erase curves allows the derivation of a nearly linear relationship between the amplitude of erratic threshold shifts and the equivalent barrier height controlling Fowler-Nordheim injection
Keywords
charge injection; flash memories; integrated circuit reliability; integrated circuit testing; Fowler-Nordheim injection; equivalent barrier height; erase curve shape; erratic bit analysis; erratic threshold shift amplitude; flash memories; near-linear relationship; single erase operation; threshold voltage dynamics tracking; Circuits; Conductivity; Contamination; Dielectric devices; Flash memory; Nonvolatile memory; Shape control; Testing; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location
Orlando, FL
Print_ISBN
0-7803-6587-9
Type
conf
DOI
10.1109/RELPHY.2001.922875
Filename
922875
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