Fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) on silicon substrate with slant field plates using deep-UV lithography featuring 5W/mm power density at X-band

Author

Chia-Hua Chang ; Heng-Tung Hsu ; Lu-Che Huang ; Che-Yang Chiang ; Chang, Edward Yi

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2012

fDate

4-7 Dec. 2012

Firstpage

941

Lastpage

943

Abstract

In this work, AlGaN/GaN HEMTs on silicon with slant field plate have been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The 0.6 × 100μm² slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance of 214 mS/mm and a breakdown voltage of 122 V. Through high-frequency measurements, the device revealed a current gain cutoff frequency (f_T) of 24 GHz, a maximum oscillation frequency (f_max) of 49 GHz and an output power density of 5.0 W/mm at X-band.

Keywords

III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; silicon; ultraviolet lithography; wide band gap semiconductors; AlGaN-GaN; Si; X-band; angle exposure technique; deep-UV lithography; frequency 24 GHz; high electron mobility transistor fabrication; high-frequency measurements; power density; slant sidewalls; slant-field-plated HEMT; submicron T-shaped gates; voltage 122 V; Aluminum gallium nitride; Gallium nitride; HEMTs; Lithography; Logic gates; MODFETs; Silicon; AlGaN/GaN; HEMTs; anodic oxide; lithography; slant field plate;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Conference_Location

Kaohsiung

Print_ISBN

978-1-4577-1330-9

Electronic_ISBN

978-1-4577-1331-6

Type

conf

DOI

10.1109/APMC.2012.6421785

Filename

6421785