DocumentCode
3098946
Title
Study the effect of applied voltage on propagation delay of bilayer graphene nanoribbon transistor
Author
Ghadiry, M.H. ; Manaf, Asrulnizam Abd ; Mousavi, S.M. ; Sadeghi, H.
Author_Institution
Sch. of Electr. & Electron. Eng., Univ. Sains Malaysia, Pulau, Malaysia
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
2
Abstract
Fundamental limitations of CMOS technology and anticipations of Moore´s law have motivated researchers to find several alternatives for these devices such as nanowire, carbon nanotube and graphene nanoribbon. In this work firstly, we develop an analytical model for quantum capacitance of monolayer and bilayer graphene. Secondly, resistance of the channel is modelled based on conductance of the nanoribbon and finally propagation delay is calculated by using resistance and capacitance.
Keywords
MOSFET; graphene; nanoribbons; C; CMOS technology; MOSFET; Moore law; bilayer graphene nanoribbon transistor; carbon nanotube; channel resistance; monolayer graphene; nanoribbon conductance; nanowire; propagation delay; quantum capacitance; Logic gates; Mathematical model; Nanoscale devices; Propagation delay; Quantum capacitance; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135226
Filename
6135226
Link To Document