• DocumentCode
    3098946
  • Title

    Study the effect of applied voltage on propagation delay of bilayer graphene nanoribbon transistor

  • Author

    Ghadiry, M.H. ; Manaf, Asrulnizam Abd ; Mousavi, S.M. ; Sadeghi, H.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Univ. Sains Malaysia, Pulau, Malaysia
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Fundamental limitations of CMOS technology and anticipations of Moore´s law have motivated researchers to find several alternatives for these devices such as nanowire, carbon nanotube and graphene nanoribbon. In this work firstly, we develop an analytical model for quantum capacitance of monolayer and bilayer graphene. Secondly, resistance of the channel is modelled based on conductance of the nanoribbon and finally propagation delay is calculated by using resistance and capacitance.
  • Keywords
    MOSFET; graphene; nanoribbons; C; CMOS technology; MOSFET; Moore law; bilayer graphene nanoribbon transistor; carbon nanotube; channel resistance; monolayer graphene; nanoribbon conductance; nanowire; propagation delay; quantum capacitance; Logic gates; Mathematical model; Nanoscale devices; Propagation delay; Quantum capacitance; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135226
  • Filename
    6135226