Modeling of interface scattering of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Author

Wang, Lin ; Hu, Weida ; Chen, Xiaoshuang ; Lu, Wei

Author_Institution

Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China

Volume

3

fYear

2011

fDate

11-13 March 2011

Firstpage

290

Lastpage

292

Abstract

The carrier transport properties of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs (DH-HEMTs) have been investigated. Previous hydrodynamic model exhibits significant discrepancies with the experimental results when used for simulating electrical properties of these DH-HEMTs. With the modification of low field mobility by taking into consideration several scattering mechanisms at InGaN/GaN interface, the simulation results show good agreement with experimental data.

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; electric properties; gallium compounds; high electron mobility transistors; hydrodynamics; indium compounds; semiconductor heterojunctions; wide band gap semiconductors; AlGaN-GaN-InGaN-GaN; carrier transport properties; double-heterojunction HEMT; electrical properties; hydrodynamic model; interface scattering; low field mobility; Aluminum gallium nitride; DH-HEMTs; Gallium nitride; MODFETs; Phonons; Scattering; DH-HEMT; hot electron effect; interface roughness scattering; phonon scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Research and Development (ICCRD), 2011 3rd International Conference on

Conference_Location

Shanghai

Print_ISBN

978-1-61284-839-6

Type

conf

DOI

10.1109/ICCRD.2011.5764197

Filename

5764197