New technique for fast characterization of SILC distribution in flash arrays

Author

Ielmini, D. ; Spinelli, A.S. ; Lacaita, A.L. ; Confalonieri, L. ; Visconti, A.

Author_Institution

Dipartimento di Elettronica ed Inf., Politecnico di Milano, Italy

fYear

2001

fDate

2001

Firstpage

73

Lastpage

80

Abstract

A new method for characterizing the SILC in flash memories is presented. The role of the SILC distribution in determining the failure statistics of flash cell arrays is first pointed out. The new technique is then explained, and results from a test array are shown. The description in terms of a simplified formula for the leakage current provides evidence for the bimodal distribution of the SILC distribution in the memory array under test. The bimodal character of the SILC distribution is finally verified by directly comparing characteristics measured on real cells with results of the new method on the same memory chip

Keywords

failure analysis; flash memories; integrated circuit reliability; integrated circuit testing; integrated memory circuits; leakage currents; SILC; SILC characterization technique; SILC distribution; bimodal distribution; failure statistics; flash arrays; flash cell arrays; flash memories; leakage current; memory array test; memory chip; test array; Channel hot electron injection; Dielectric substrates; Flash memory; Flash memory cells; Leakage current; Nonvolatile memory; Semiconductor device measurement; Statistical analysis; Statistical distributions; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922885

Filename

922885