DocumentCode :
3099085
Title :
A 24 GHz Class-A power amplifier in 0.13um CMOS technology
Author :
Khan, H.R. ; Wahab, Q.
Author_Institution :
Electron. Eng. Dept., NED Univ. of Eng. & Technol., Karachi, Pakistan
Volume :
3
fYear :
2011
fDate :
11-13 March 2011
Firstpage :
314
Lastpage :
317
Abstract :
A 24 GHz Class-A amplifier is designed in 0.13 μm CMOS technology. The matching network for the cascode amplifier is implemented by microstrip lines that have been implemented in small space by meandering. The amplifier delivers 12.5 dBm power to a 50 Ω load from a 2 V supply. A maximum Power Added Efficiency (PAE) of 30% is achieved at 1-dB compression point (P1dB).
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; field effect MMIC; microstrip lines; CMOS technology; cascode amplifier; class-A power amplifier; efficiency 30 percent; frequency 24 GHz; matching network; maximum power added efficiency; microstrip lines; resistance 50 ohm; size 0.13 mum; voltage 2 V; CMOS integrated circuits; Gain; Metals; Microstrip; Power amplifiers; Substrates; Transistors; automotive radar; linearity; microstrip lines; microwave amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Research and Development (ICCRD), 2011 3rd International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-61284-839-6
Type :
conf
DOI :
10.1109/ICCRD.2011.5764203
Filename :
5764203
Link To Document :
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