Title :
Improving corrosion-resistance of silicon-glass micropackages using boron doping and/or self-induced galvanic bias
Author :
Stark, B.H. ; Dokmeci, M.R. ; Harpster, T.J. ; Najafi, K.
Author_Institution :
Center for Wireless Integrated MicroSyst., Michigan Univ., Ann Arbor, MI, USA
Abstract :
In this paper, we report upon two novel methods for improving the corrosion resistance of silicon-glass micropackages in high temperature saline soak tests. By using boron doping and/or galvanic biasing, we have shown that the dissolution of polysilicon can be reduced by several orders of magnitude. Physical models for improved corrosion resistance are also presented. Further tests on the packages in-vivo and in-vitro show that the package maintains long-term hermicity
Keywords :
boron; composite materials; corrosion resistance; dissolving; doping profiles; elemental semiconductors; glass; micromechanical devices; semiconductor device models; semiconductor device packaging; semiconductor device testing; silicon; Si; Si:B; boron doping; corrosion resistance; corrosion-resistance; galvanic biasing; high temperature saline soak tests; in-vitro package tests; in-vivo package tests; long-term hermicity; physical models; polysilicon dissolution; self-induced galvanic bias; silicon-glass micropackages; Bonding; Boron; Corrosion; Doping; Electronics packaging; Galvanizing; Glass; Stress; Temperature; Testing;
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
DOI :
10.1109/RELPHY.2001.922890
