Calculating the error in long term oxide reliability estimates

Author

Linder, B.P. ; Stathis, J.H. ; Frank, D.J.

Author_Institution

Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2001

fDate

2001

Firstpage

168

Lastpage

171

Abstract

Ultra-thin oxide reliability is a critical issue in integrated circuit scaling. Oxide reliability may actually prevent future scaling of SiO₂ gate dielectrics. The statistical error in long term oxide reliability projections has not been cohesively treated. Using Monte Carlo techniques, the amount of uncertainty in reliability projections is calculated. Applying the derived results to typical published data, the uncertainty in the failure rate is greater than an order of magnitude

Keywords

Monte Carlo methods; dielectric thin films; error analysis; error statistics; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; parameter estimation; silicon compounds; Monte Carlo techniques; SiO₂; SiO₂ gate dielectrics; error calculation; failure rate uncertainty; integrated circuit scaling; long term oxide reliability estimates; long term oxide reliability projections; oxide reliability; reliability projection uncertainty; statistical error; ultra-thin oxide reliability; Circuit testing; Design for quality; Dielectrics; Electric breakdown; Integrated circuit reliability; MOSFETs; Monte Carlo methods; Stress; Uncertainty; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922897

Filename

922897