Static and low-frequency noise characterization of ultrathin SOI with very thin BOX in pseudo-MOSFET configuration

The pseudo-MOSFET (Ψ-MOSFET) (Fig. 1) has constantly been used for studying the electrical properties of as-fabricated fully depleted SOI wafers. Two recent challenges drive the research: (i) extension to other types of electrical measurements and (ii) application to ultrathin SOI structures. We recently addressed the first challenge by proving the possibility of low-frequency noise (LFN) measurements with Ψ-MOSFET [1]. In this paper, we investigate for the first time the Ψ-MOSFET noise in ultrathin films (down to 12 nm) and BOX (down to 10 nm).