Title :
Characterization and modeling of 18–40GHz mm-wave tunneling diode detector
Author :
Wang, Xiao ; Xue, Hongxi
Author_Institution :
Dept. of Electron. Eng., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper presents a new AC equivalent circuit model for 18-40GHz tunneling diode detector. The mm-wave diode equivalent circuit consists of normal diode components, as well as parasitic parameters, e.g., resonance capacitor, resistor and inductor, to accurately model high-frequency I-V behaviors. Experiment confirms that the new model works well across the 18-40GHz spectrum and enables accurate matching design for tunneling diode detector circuits with reduced reflection down to -12dB.
Keywords :
equivalent circuits; inductors; millimetre wave detectors; millimetre wave diodes; resistors; tunnel diodes; AC equivalent circuit; frequency 18 GHz to 40 GHz; high-frequency I-V behaviors; inductor; mm-wave tunneling diode detector; normal diode components; parasitic parameters; resistor; resonance capacitor; Detectors; Equivalent circuits; Integrated circuit modeling; Reflection; Schottky diodes; Testing; Tunneling; RTD; Resonance tunneling diode detector; matching; mm-wave; reflection;
Conference_Titel :
Computer Research and Development (ICCRD), 2011 3rd International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-61284-839-6
DOI :
10.1109/ICCRD.2011.5764214
