Enhanced programming and erasing speeds in p-channel charge-trapping flash transistor devices with SiGe channel

P-channel charge-trapping flash transistor devices with different Ge contents in SiGe channel and different thicknesses of Si_0.8Ge_0.2 channel are investigated in this work. Both programming and erasing speeds are significantly improved by employing SiGe channel in comparison with those employing Si-channel. Moreover, satisfactory retention and endurance characteristics for device with SiGe channel are also achieved, which indicates the out-diffusion of Ge atoms from channel does not affect the reliability properties of flash memory devices.