Characterization and investigation of the interaction between hot electron and electrostatic discharge stresses using NMOS devices in 0.13 μm CMOS technology

Author

Salman, Akram ; Gauthier, Rober ; Stadler, Wolfgang ; Esmark, Kai ; Muhammad, Mujahid ; Putnam, Chris ; Ioannou, Dimitris

Author_Institution

IBM Corp., Essex Junction, VT, USA

fYear

2001

fDate

2001

Firstpage

219

Lastpage

225

Abstract

In this paper, the high-current characteristics encountered during electrostatic discharge (ESD) events using NMOS/Lnpn protection devices in a 0.13 μm CMOS technology are investigated for different device parameters. The effects of silicide blocking and hot electron (HE) shifts on the second breakdown current of the NMOS devices are studied. The impact of nondestructive ESD stressing on HE shifts is also studied for both silicided and nonsilicided devices

Keywords

CMOS integrated circuits; MOSFET; electrostatic discharge; hot carriers; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; protection; semiconductor device breakdown; 0.13 micron; CMOS technology; ESD events; HE shifts; NMOS devices; NMOS/Lnpn protection devices; NMOSFETs; device parameters; electrostatic discharge events; electrostatic discharge stresses; high-current characteristics; hot electron shifts; hot electron stresses; nondestructive ESD stressing; nonsilicided devices; second breakdown current; silicide blocking; silicided devices; Breakdown voltage; CMOS technology; Circuits; Electric breakdown; Electrons; Electrostatic discharge; Helium; MOS devices; Protection; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922905

Filename

922905