DocumentCode
3099395
Title
An analysis of bipolar breakdown and its application to the design of ESD protection circuits
Author
Joshi, Sopan ; Ida, Richard ; Givelin, Philippe ; Rosenbaum, Elyse
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear
2001
fDate
2001
Firstpage
240
Lastpage
245
Abstract
Analytical expressions for the breakdown voltage of an NPN with a resistively grounded base, both with and without the Zener diode trigger which is used in a common ESD protection circuit, are presented for the first time. The results are used to explain anomalous behavior in the I-V curve of the protection circuit, and to achieve a more efficient ESD protection circuit design
Keywords
BiCMOS integrated circuits; Zener diodes; bipolar integrated circuits; bipolar transistors; electrostatic discharge; protection; semiconductor device breakdown; ESD protection circuit; ESD protection circuit design; I-V curve; NPN breakdown voltage; Zener diode trigger; bipolar breakdown analysis; protection circuit; resistively grounded base; Application software; BiCMOS integrated circuits; Breakdown voltage; Circuit synthesis; Diodes; Electric breakdown; Electrostatic discharge; Protection; Resistors; Space charge;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location
Orlando, FL
Print_ISBN
0-7803-6587-9
Type
conf
DOI
10.1109/RELPHY.2001.922908
Filename
922908
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