DocumentCode :
3099395
Title :
An analysis of bipolar breakdown and its application to the design of ESD protection circuits
Author :
Joshi, Sopan ; Ida, Richard ; Givelin, Philippe ; Rosenbaum, Elyse
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fYear :
2001
fDate :
2001
Firstpage :
240
Lastpage :
245
Abstract :
Analytical expressions for the breakdown voltage of an NPN with a resistively grounded base, both with and without the Zener diode trigger which is used in a common ESD protection circuit, are presented for the first time. The results are used to explain anomalous behavior in the I-V curve of the protection circuit, and to achieve a more efficient ESD protection circuit design
Keywords :
BiCMOS integrated circuits; Zener diodes; bipolar integrated circuits; bipolar transistors; electrostatic discharge; protection; semiconductor device breakdown; ESD protection circuit; ESD protection circuit design; I-V curve; NPN breakdown voltage; Zener diode trigger; bipolar breakdown analysis; protection circuit; resistively grounded base; Application software; BiCMOS integrated circuits; Breakdown voltage; Circuit synthesis; Diodes; Electric breakdown; Electrostatic discharge; Protection; Resistors; Space charge;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
Type :
conf
DOI :
10.1109/RELPHY.2001.922908
Filename :
922908
Link To Document :
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