Title :
Design and properties analysis of a single-chip white InGaN/GaN LED
Author :
Xiansong, Fu ; Pingjuan, Niu ; Cui, Xu Wen ; Haitao, Tian ; Hong Chen
Author_Institution :
Eng. Res. Center of High Power Solid State Lighting Applic. Syst., Tianjin Polytech. Univ., Tianjin, China
Abstract :
LED can not only improve the quality and efficiency of light, but also save energy and reduce environmental pollution. Developing LED industry has great significance for the national economy and the people´s livelihood. In the paper, main methods for fabricating white LED and recent progresses in white LED are studied. And then, a novel single-chip white InGaN/GaN LED is designed. Fanally, the I-V characteristics and optical characteristics of the LEDs are analyzed. Turn-on voltage of the single-chip white light LED is 2.7V and reverse leakage current is 0.18mA at reverse-bias voltage of 15V.The single-chip white LED emits white light as the injection current is from 5mA to 60mA.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; leakage currents; light emitting diodes; quantum well devices; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; wide band gap semiconductors; I-V characteristics; InGaN-GaN; LED fabrication; LED property analysis; MOCVD; current 5 mA to 60 mA; injection current; metal-organic vapor phase epitaxy; optical characteristics; quantum wells; reverse leakage current; reverse-bias voltage; single-chip white LED design; turn-on voltage; voltage 15 V; voltage 2.7 V; Epitaxial growth; Gallium nitride; Light emitting diodes; Phosphors; metal-organic vapor phase epitaxy(MOCVD); quantum dots; quantum wells; single-chip white LED;
Conference_Titel :
Information Networking and Automation (ICINA), 2010 International Conference on
Conference_Location :
Kunming
Print_ISBN :
978-1-4244-8104-0
Electronic_ISBN :
978-1-4244-8106-4
DOI :
10.1109/ICINA.2010.5636479
