• DocumentCode
    3099524
  • Title

    Charge transfer region at the edge of metal contacts on graphene and its impact on contact resistance measurement

  • Author

    Lee, Kangmu M. ; Ohoka, Atsushi ; Asbeck, Peter M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    As graphene devices are increasingly developed, the metal-graphene contact has acquired an important role, because recently reported contact resistances are not good enough to maintain the intrinsic advantages of graphene in scaled devices. It is known that a metal on graphene can provide a strong doping effect associated with its work function difference and graphene´s small density of states [1], [2]. When the carrier densities of the graphene channel and the metal-covered graphene are different (fig.1), a charge transfer region (CTR) near the contact edge is formed [2], [3], in which the potential and carrier density gradually change to their equilibrium state. In this study, we investigate various factors which can affect the CTR length, and the impacts of CTR on contact resistance measurement.
  • Keywords
    carrier density; contact resistance; graphene; p-n junctions; titanium; work function; C-Ti; carrier density; charge transfer region; contact resistance measurement; density of states; graphene-metal contacts; p-n junction resistance; work function; Charge carrier density; Charge transfer; Contact resistance; Doping; Electrical resistance measurement; Metals; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135256
  • Filename
    6135256