DocumentCode
3099524
Title
Charge transfer region at the edge of metal contacts on graphene and its impact on contact resistance measurement
Author
Lee, Kangmu M. ; Ohoka, Atsushi ; Asbeck, Peter M.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
2
Abstract
As graphene devices are increasingly developed, the metal-graphene contact has acquired an important role, because recently reported contact resistances are not good enough to maintain the intrinsic advantages of graphene in scaled devices. It is known that a metal on graphene can provide a strong doping effect associated with its work function difference and graphene´s small density of states [1], [2]. When the carrier densities of the graphene channel and the metal-covered graphene are different (fig.1), a charge transfer region (CTR) near the contact edge is formed [2], [3], in which the potential and carrier density gradually change to their equilibrium state. In this study, we investigate various factors which can affect the CTR length, and the impacts of CTR on contact resistance measurement.
Keywords
carrier density; contact resistance; graphene; p-n junctions; titanium; work function; C-Ti; carrier density; charge transfer region; contact resistance measurement; density of states; graphene-metal contacts; p-n junction resistance; work function; Charge carrier density; Charge transfer; Contact resistance; Doping; Electrical resistance measurement; Metals; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135256
Filename
6135256
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