• DocumentCode
    3099587
  • Title

    40-GHz VCO with 10-GHz tuning range in a 90-nm CMOS technology

  • Author

    Li, Zhu ; Wang, Zhigong ; Li, Zhuqun ; Li, Qin ; Yang, Geliang ; Liu, Faen

  • Author_Institution
    Inst. of RF- & OE-ICs (IROI), Southeast Univ. (SEU), Nanjing, China
  • Volume
    3
  • fYear
    2011
  • fDate
    11-13 March 2011
  • Firstpage
    426
  • Lastpage
    429
  • Abstract
    This paper presents a wide tuning rang mm-wave VCO (voltage controlled oscillator) fabricated in IBM 90-nm CMOS technology. The VCO can be tuned from 31.4 GHz to 42.2 GHz and utilizes a differential tuning mechanism based on varactors and switched capacitors. A switched current source is used to improve the performance of the VCO when an MIM (metal-insulated-metal) capacitor is switched in the LC resonation tank. Without switched capacitor, the VCO core circuit consumes a power of 8.4 mW and exhibits a phase noise of -114 dBc/Hz at 1 MHz offset from resonation frequency, but with switched capacitor, the power is increased to 12.2 mW, and the phase noise is incresed to -104 dBc/Hz.
  • Keywords
    CMOS analogue integrated circuits; MIM devices; MMIC oscillators; field effect MIMIC; millimetre wave oscillators; phase noise; switched capacitor networks; varactors; voltage-controlled oscillators; IBM CMOS technology; LC resonation tank; MIM capacitor; VCO core circuit; differential tuning mechanism; frequency 10 GHz; frequency 31.4 GHz to 42.2 GHz; metal-insulated-metal capacitor; phase noise; power 12.2 mW; power 8.4 mW; resonation frequency; size 90 nm; switched capacitor network; switched capacitors; switched current source; varactors; voltage controlled oscillator; CMOS integrated circuits; Capacitors; Phase noise; Resonant frequency; Switches; Tuning; Voltage-controlled oscillators; CMOS; Millimeter wave IC; Phase noise; Switched capacitor; Voltage controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Research and Development (ICCRD), 2011 3rd International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-61284-839-6
  • Type

    conf

  • DOI
    10.1109/ICCRD.2011.5764229
  • Filename
    5764229