High SRAM standby current due to the printing of spurious images

Author

Tang, Shoou-yu ; Mims, Marc ; Cynkar, Tom ; Marcoux, Paul.J. ; Eaton, Dennis H.

Author_Institution

Networking Solutions Div., Agilent Technol. Inc, Fort Collins, CO, USA

fYear

2001

fDate

2001

Firstpage

303

Lastpage

307

Abstract

Photoemission microscopy of a 2 Mbit SRAM identified a physical pattern of quiescent current (IDDq) failures on the regular array of this circuit. The pattern of IDDq failures correlated almost exactly with identifying marks on the edge of the SRAM gate reticle. This discovery led to the detection of contamination of the photolithographic imaging optics that resulted in ghost images

Keywords

SRAM chips; electric current; failure analysis; fault currents; integrated circuit reliability; integrated circuit testing; photolithography; reticles; 2 Mbit; IDDq failure pattern; IDDq failures; SRAM; SRAM gate reticle; SRAM standby current; ghost images; identifying marks; photoemission microscopy; photolithographic imaging optics contamination; physical pattern; quiescent current failures; regular circuit array; spurious image printing; Contamination; Light scattering; Optical scattering; Packaging; Particle scattering; Photoelectricity; Printing; Random access memory; Voltage; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922919

Filename

922919