Reservoir modeling for electromigration improvement of metal systems with refractory barriers

Author

Dion, Michael J.

Author_Institution

Intersil Corp., Melbourne, FL, USA

fYear

2001

fDate

2001

Firstpage

327

Lastpage

333

Abstract

Metal ion reservoirs in a Ti-AlCu-TiN metal system with W vias have been shown to increase electromigration lifetimes in barrier metal systems. In this study, it is empirically shown that EM lifetime increase is related to the natural-log of reservoir length in a constant width line. In this process, where vias do not penetrate the barrier, the number of vias, via spacing, and metal overlap do not play a significant role in defining EM lifetime. The results are thought to apply to any barrier metal system, assuming the via does not penetrate the barrier and contact the AlCu or Cu main conductor

Keywords

aluminium alloys; chemical interdiffusion; copper alloys; diffusion barriers; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; titanium; titanium compounds; AlCu main conductor contact; Cu main conductor contact; EM lifetime; Ti-AlCu-TiN; Ti-AlCu-TiN metal system; W; W vias; barrier metal system; barrier metal systems; constant width line; electromigration improvement; electromigration lifetimes; metal ion reservoirs; metal overlap; metal systems; natural logarithm; refractory barriers; reservoir length; reservoir modeling; via barrier penetration; via spacing; Artificial intelligence; Conductors; Copper; Current density; Electromigration; Electronics industry; Electrons; Life testing; Reservoirs; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922923

Filename

922923