Title :
Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications
Author :
Degraeve, Robin ; Kaczer, Ben ; De Keersgieter, An ; Groeseneken, Guido
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
A method to determine the breakdown position in short channel nMOSFETs is introduced. We find that soft breakdown occurs exclusively in the transistor channel while the hardest circuit killing breakdowns occur above the source and drain extension regions. Since these breakdowns make up only a small fraction of all breakdowns, a relaxation of the reliability specification is possible
Keywords :
MOSFET; integrated circuit reliability; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; breakdown location; breakdown mode; breakdown position; circuit killing breakdowns; drain extension region; reliability specification; reliability specifications; short channel NMOSFETs; soft breakdown; source region; transistor channel; Breakdown voltage; Current density; Digital circuits; Electric breakdown; Extrapolation; Low voltage; MOSFETs; Predictive models; Stress; Testing;
Conference_Titel :
Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-6587-9
DOI :
10.1109/RELPHY.2001.922928
