Hot-carrier reliability of p-MOSFET with ultra-thin silicon nitride gate dielectric

Author

Polishchuk, Igor ; Yeo, Yee-Chia ; Lu, Qiang ; King, Tsu-Jae ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2001

fDate

2001

Firstpage

425

Lastpage

430

Abstract

The degradation of 100 nm effective channel length pMOS transistors with 14 Å equivalent oxide thickness jet vapor deposited (JVD) Si₃N₄ gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concern. Hot-carrier reliability of 14 Å Si₃N₄ transistors is compared to the reliability of 16 Å SiO₂ transistors

Keywords

MOSFET; dielectric thin films; hot carriers; interface states; jets; leakage currents; semiconductor device measurement; semiconductor device reliability; silicon compounds; vapour deposition; 100 nm; Si₃N₄; Si₃N₄ transistors; SiO₂; SiO₂ transistors; dominant degradation mechanism; effective channel length; equivalent oxide thickness; hot-carrier reliability; hot-carrier stress; hot-carrier-induced gate leakage; interface-state generation; jet vapor deposited Si₃N₄ gate dielectric; p-MOSFET; pMOS transistors; reliability; ultra-thin silicon nitride gate dielectric; CMOS process; Degradation; Dielectric materials; Fabrication; High K dielectric materials; High-K gate dielectrics; Hot carriers; MOSFET circuits; Silicon; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2001. Proceedings. 39th Annual. 2001 IEEE International

Conference_Location

Orlando, FL

Print_ISBN

0-7803-6587-9

Type

conf

DOI

10.1109/RELPHY.2001.922937

Filename

922937