Title :
Phase-change memory on thin-film-transistor technology
Author :
Li, Lin ; Zhang, Lining ; He, Jin ; Chan, Mansun
Author_Institution :
Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Abstract :
Phase-change memory (PCM) stores information based on the PC material´s property to reversibly switch between two resistance states by Joule heating with applied currents [1], and provides a new set of features combining features of the DRAM and the Flash memory. PCM on thin-film-transistor (TFT) technology can potentially offer a fast, high endurance and high-density non-volatile memory for system-on-panel applications. In this work, we demonstrate functional PCM on TFT technology for the first time. To overcome the low current drive and coarse design rule of TFT technology, thin-film-diodes (TFDs) with not only larger drive capability but also better leakage control than TFTs [2, 3] are fabricated with CMOS TFTs on the same glass wafer with the same fabrication process and implemented as PCM drivers. In addition, thermal responses of PCM on glass substrate for TFT technology are investigated.
Keywords :
CMOS integrated circuits; DRAM chips; flash memories; phase change memories; semiconductor diodes; thin film transistors; CMOS; DRAM; Joule heating; PCM drivers; TFT technology; applied currents; fabrication process; flash memory; glass substrate; glass wafer; high-density nonvolatile memory; leakage control; phase-change material property; phase-change memory; resistance states; system-on-panel applications; thin-film-diodes; thin-film-transistor technology; Arrays; CMOS integrated circuits; Logic gates; Phase change materials; Resistance; Substrates; Thin film transistors;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135282
