Intersubband electro-optics and frequency conversion at normal incidence

Author

Xie, H. ; Wang, W.I. ; Meyer, J.R. ; Hoffman, C.A.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

1

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

23

Abstract

We present new classes of E-O modulators and frequency converters based on L-valley intersubband transitions in GaSb-based QW systems. Effective-mass anisotropy and the tilt of the growth direction with respect to the principal axes of the ellipsoidal constant-energy surfaces of L valleys enable these novel devices to operate at normal incidence. An additional advantage of the GaSb-based QW system is that the large conduction-band offset of the GaSb/AlSb system (up to 1 eV) allows operation over a wide infrared range covering longwave (8-12 μm), midwave (3-5 μm), and even shorter wavelengths

Keywords

electro-optical modulation; 3 to 5 micron; 8 to 12 micron; GaSb-AlSb; L-valley intersubband transitions; conduction-band offset; effective-mass anisotropy; electro-optic modulators; frequency converters; infrared region; normal incidence; quantum well systems; tilted growth; Anisotropic magnetoresistance; Bandwidth; Frequency conversion; Frequency modulation; Optical coupling; Optical devices; Optical frequency conversion; Optical modulation; Optical surface waves; Oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586871

Filename

586871