Title :
Intersubband χ(2) in symmetric and asymmetric n- and p-doped GaAs and HgTe quantum wells
Author :
Voon, L. C Lew Yan ; Mohan, L. R Ram
fDate :
31 Oct-3 Nov 1994
Abstract :
Symmetric quantum wells of GaAs/AlGaAs and HgTe/CdTe are shown to exhibit second-order non-linearity due to tetragonal D2d symmetry. For p-doped symmetric wells we predict susceptibilities ~100 times larger than the corresponding bulk values
Keywords :
nonlinear optical susceptibility; GaAs-AlGaAs; HgTe-CdTe; asymmetric wells; intersubband susceptibilities; n-doped wells; p-doped wells; quantum wells; second-order nonlinearity; symmetric wells; tetragonal symmetry; Anisotropic magnetoresistance; Doping; Electrons; Gallium arsenide; Linearity; Microstructure; Physics; Resonance; Semiconductor process modeling; Superlattices;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586874
