• DocumentCode
    310010
  • Title

    Intersubband χ(2) in symmetric and asymmetric n- and p-doped GaAs and HgTe quantum wells

  • Author

    Voon, L. C Lew Yan ; Mohan, L. R Ram

  • Volume
    1
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    30
  • Abstract
    Symmetric quantum wells of GaAs/AlGaAs and HgTe/CdTe are shown to exhibit second-order non-linearity due to tetragonal D2d symmetry. For p-doped symmetric wells we predict susceptibilities ~100 times larger than the corresponding bulk values
  • Keywords
    nonlinear optical susceptibility; GaAs-AlGaAs; HgTe-CdTe; asymmetric wells; intersubband susceptibilities; n-doped wells; p-doped wells; quantum wells; second-order nonlinearity; symmetric wells; tetragonal symmetry; Anisotropic magnetoresistance; Doping; Electrons; Gallium arsenide; Linearity; Microstructure; Physics; Resonance; Semiconductor process modeling; Superlattices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586874
  • Filename
    586874
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=310010