Title :
Laser-assisted CBE and its device applications
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
31 Oct-3 Nov 1994
Abstract :
Summary form only given. Laser-assisted chemical beam epitaxy (CBE) can control in-plain bandgap energy in InGaAsP MQWs. A multiple-wavelength laser diode array and photodetector, covering a 1.3-1.5 μm wavelength region, have been grown in a single step
Keywords :
indium compounds; 1.3 to 1.5 mum; InGaAsP; InGaAsP MQWs; device applications; in-plain bandgap energy; laser-assisted CBE; laser-assisted chemical beam epitaxy; multiple-wavelength laser diode array; photodetector; single step epitaxial growth; Chemical lasers; Diode lasers; Epitaxial growth; Laser beams; Molecular beam epitaxial growth; Optical arrays; Optical control; Photonic band gap; Quantum well devices; Semiconductor laser arrays;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586883
