Compatibility of impurity-free selective interdiffusion with high-speed and high-power pseudomorphic InyGa1-yAs/GaAs MQW lasers

Summary form only given. The selective interdiffusion of quantum well heterostructures has become an important technique for the fabrication and integration of optoelectronic devices such as QW lasers. The aim of this paper is to study the compatibility of the impurity-free interdiffusion (IFID) technique (in which layer intermixing is enhanced due to the creation and diffusion of Ga vacancies caused by Ga out-diffusion into a dielectric cap layer during high-temperature annealing) with the fabrication of such highly strained InGaAs-GaAs MQW laser structures