DocumentCode
310021
Title
Low-temperature AlGaAs-GaAs epitaxial lift-off metal-semiconductor-metal photodetector
Author
Hargis, M.C. ; Drabik, T.J. ; Woodall, J.M.
Author_Institution
Georgia Inst. of Technol., Atlanta, GA, USA
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
50
Abstract
Summary form only given. Metal semiconductor metal (MSM) photodetectors were fabricated from epitaxial material containing low temperature (LT) AlGaAs window (or cladding) layers and tested. Due to the high resistivity of the LT-AlGaAs, the epitaxial lift off (ELO)-NP MSM performs comparably to its on-wafer complement
Keywords
aluminium compounds; AlGaAs-GaAs; AlGaAs:GaAs; cladding layers; epitaxial lift-off metal-semiconductor-metal photodetector; epitaxial material; high resistivity; low temperature; low-temperature; on-wafer complement; optical testing; window layers; Dark current; Degradation; Detectors; Electrodes; Gallium arsenide; Lithography; Passivation; Photodetectors; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586885
Filename
586885
Link To Document