Title :
Heterojunction — A comprative study
Author :
Lamba, Vijay K. ; Engles, Derick ; Verma, Munish
Author_Institution :
Haryana Coll. of Technol. & Manage., Kaithal, India
Abstract :
To investigate the transport properties of the heterojunction formed by carbon nano tubes, and Silicon carbide nanotubes, the structures are designed using virtual nano lab. The heterojunction were first obtained through a geometry optimization processes. Based on the results of optimization, two-probe systems of the heterojunction were designed and its transport properties were calculated with a method resulting due to modification of non-equilibrium Green´s function (NEGF) with density functional theory (DFT). We found that, if we plot a transmission coefficient T(E) as a function of energy, we got a transmission gap of about 1.225 ev, which means that in this energy range the possibility of an electron to transfer from one electrode to another is nearly zero. We further found that the highest occupied molecular orbital (HOMO) has a higher electron density on the CNT section and the lowest unoccupied molecular orbital (LUMO) mainly concentrates on the interface and the Silicon carbide nanotubes section. If we plot I-V curve of the heterojunction the curve can be divided into three regions i.e. if the bias voltage is less than -2.275V the current decreases with decrease in voltage, if it is in between -2.225 to 1.775 V, the current is nearly zero, and if bias is greater than 1.775 V, the current increases with an increase in voltage.
Keywords :
Green´s function methods; carbon nanotubes; density functional theory; electron density; optimisation; semiconductor heterojunctions; semiconductor nanotubes; silicon compounds; wide band gap semiconductors; C-SiC; I-V curve; bias voltage; carbon nanotubes; density functional theory; electron density; geometry optimization processes; heterojunction; highest occupied molecular orbital; lowest unoccupied molecular orbital; nonequilibrium Green´s function; silicon carbide nanotubes; transmission coefficient; transmission gap; transport properties; two-probe systems; virtual nano lab; voltage -2.225 V to 1.775 V; DFT; Hetrojunctions; NEGF;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135297