Title :
Highly-doped p-ZnSe formation by Li3N diffusion
Author :
Lim, S.W. ; Honda, T. ; Yanashima, K. ; Koyama, Fumio ; Kukimoto, H. ; Iga, K.
Author_Institution :
P&I Lab., Tokyo Inst. of Technol., Japan
fDate :
31 Oct-3 Nov 1994
Abstract :
We found that Li3N diffusion makes a good ohmic contact to MOCVD-grown ZnSe layers. Hall measurement at 300 K showed that the hole concentration and resistivity is 8.6x1017 cm-3 and 0.4 Ωcm for the diffused layers at 470°C. This result is comparable to that reported for highly N-doped ZnSe layers by MBE. It indicates that L3N diffusion is effective for solving the ohmic contact problem of MOVPE-grown p-ZnSe without adding any complicated structures
Keywords :
zinc compounds; Hall measurement; Li3N diffusion; MOCVD; MOVPE; ZnSe:Li3N; highly-doped p-ZnSe; hole concentration; ohmic contact; photoluminescence; resistivity; Diode lasers; Gold; Temperature dependence; Voltage; Zinc compounds;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586890
