• DocumentCode
    310025
  • Title

    Highly-doped p-ZnSe formation by Li3N diffusion

  • Author

    Lim, S.W. ; Honda, T. ; Yanashima, K. ; Koyama, Fumio ; Kukimoto, H. ; Iga, K.

  • Author_Institution
    P&I Lab., Tokyo Inst. of Technol., Japan
  • Volume
    1
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    59
  • Abstract
    We found that Li3N diffusion makes a good ohmic contact to MOCVD-grown ZnSe layers. Hall measurement at 300 K showed that the hole concentration and resistivity is 8.6x1017 cm-3 and 0.4 Ωcm for the diffused layers at 470°C. This result is comparable to that reported for highly N-doped ZnSe layers by MBE. It indicates that L3N diffusion is effective for solving the ohmic contact problem of MOVPE-grown p-ZnSe without adding any complicated structures
  • Keywords
    zinc compounds; Hall measurement; Li3N diffusion; MOCVD; MOVPE; ZnSe:Li3N; highly-doped p-ZnSe; hole concentration; ohmic contact; photoluminescence; resistivity; Diode lasers; Gold; Temperature dependence; Voltage; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586890
  • Filename
    586890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=310025