DocumentCode :
310038
Title :
Novel multiple quantum well modulators for optical interconnects
Author :
Goossen, K.W.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Volume :
1
fYear :
1994
fDate :
31 Oct-3 Nov 1994
Firstpage :
84
Abstract :
Optical interconnects between electronic integrated circuit chips may alleviate their bandwidth and pinout number requirements. This is especially true if surface-normal photonic elements are used since then large two-dimensional arrays of interconnects may be formed. A likely candidate for the photonic elements are multiple quantum well (MQW) modulators. Attempts to improve the performance of these devices will be discussed here. The attempts come under three categories: (1) Increasing the electroabsorption of the MQW by altering its structure; (2) Increasing modulation by stacking devices; (3) Increasing modulation by placing the MQW in a Fabry-Perot cavity
Keywords :
electro-optical modulation; Fabry-Perot cavity; electroabsorption; multiple quantum well modulators; optical interconnects; photonic elements; stacked devices; Absorption; Excitons; Integrated circuit interconnections; Optical interconnections; Optical modulation; Optical receivers; Optical saturation; Optical surface waves; Photonic integrated circuits; Quantum well devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
Type :
conf
DOI :
10.1109/LEOS.1994.586904
Filename :
586904
Link To Document :
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