DocumentCode :
310039
Title :
Hydrogenation of Schottky-barrier multiple-quantum-well modulator structures
Author :
Woodward, T.K. ; Cunningham, J.E. ; Jan, W.Y. ; Kastalsky, A.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Volume :
1
fYear :
1994
fDate :
31 Oct-3 Nov 1994
Firstpage :
87
Abstract :
We describe the first investigations of hydrogenation on multiple-quantum-well (MQW) optical modulator structures. In particular, we have studied Schottky-barrier modulator structures. We find that hydrogen has a marked beneficial effect on the photocurrent collection efficiency of Schottky-barrier-based MQW modulators. Further, room temperature photoluminescence intensity of our samples was 25 times larger with hydrogen exposure. Both of these results suggest that carrier lifetimes in our samples are increased by hydrogenation, indicating that deep-level non-radiative recombination centers are passivated by hydrogenation. Further, we find that shallow-donor levels are also passivated
Keywords :
electro-optical modulation; H2; Schottky-barrier multiple-quantum-well modulator; carrier lifetime; deep-level nonradiative recombination centers; hydrogenation; optical modulator; passivation; photocurrent collection efficiency; shallow-donor levels; Annealing; Buffer layers; Chromium; Etching; Hydrogen; Optical buffering; Optical modulation; Photoconductivity; Plasma temperature; Quantum well devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
Type :
conf
DOI :
10.1109/LEOS.1994.586905
Filename :
586905
Link To Document :
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