Title :
Trap analysis in AlGaN/GaN HEMTs using indirect and direct methods
Author :
Shah, P.B. ; Dedhia, R. ; Tompkins, R. ; Viveiros, E. ; Jones, K.A.
Author_Institution :
SEDD, U.S. Army Res. Lab., Adelphi, MD, USA
Abstract :
AlGaN/GaN HEMTs are important for high-frequency RF communication systems. However free carrier traps in the HEMTs caused by material growth issues, material interfaces, and processing issues reduce the device performance and life. We analyzed the switching performance of HEMTs and investigated locating and quantifying the traps involved. Results from multiple samples will be provided for comparisons.
Keywords :
HF radio propagation; aluminium compounds; electron traps; gallium compounds; high electron mobility transistors; AlGaN-GaN; HEMT; free carrier trap; high-frequency RF communication system; material growth issue; material interface; processing issue; switching performance analysis; trap analysis; Aluminum gallium nitride; Energy states; Gallium nitride; HEMTs; MODFETs; Materials; Semiconductor device measurement;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135307
