Title :
Wavelength tunable two-pad ridge waveguide distributed Bragg reflector InGaAs-GaAs quantum well lasers
Author :
Smith, G.M. ; Hughes, J.S. ; Lammert, R.M. ; Osowski, M.L. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Carrier injection in the grating section is used to tune the emission wavelength of a single growth step, single frequency ridge waveguide InGaAs/GaAs quantum well distributed Bragg reflector laser with two top contacts
Keywords :
indium compounds; InGaAs-GaAs; carrier injection; emission wavelength; grating section; single frequency ridge waveguide lasers; single growth step; top contacts; wavelength tunable two-pad ridge waveguide DBR InGaAs-GaAs quantum well lasers; Distributed Bragg reflectors; Etching; Gallium arsenide; Gratings; Laser feedback; Laser tuning; Metallization; Quantum well lasers; Tunable circuits and devices; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586913
