Title :
Photonic devices properties of zinc nitride film produced by reactive magnetron sputtering
Author :
Wen, Ting ; Jayatissa, Ahalapitiya H.
Author_Institution :
Univ. of Toledo, Toledo, OH, USA
Abstract :
Zinc nitride films were prepared by the rf-magnetron sputtering using Zn target in Ar-N2 plasma for 30 min at 300 W and annealed for 1 h in O2 at 300 °C. The XRD measurement indicated that the as-deposited film had polycrystalline structure with five peaks corresponding to the cubic anti-bixbyite Zn3N2 and exhibited preferred orientation (400). The annealing weakened the crystallinity and generated ZnO texture. The AFM images revealed that no significant change was generated in the grain size and surface roughness. Direct band gaps of 1.15 eV and 1.4 eV were obtained for the as-deposited and annealed films respectively. The photoconductivity measurements indicated that the as-deposited film did not have any response whereas the annealed film was photoconductive.
Keywords :
X-ray diffraction; annealing; atomic force microscopy; energy gap; grain size; photoconductivity; photonic band gap; sputter deposition; surface roughness; surface texture; thin films; zinc compounds; AFM images; Ar-nitrogen plasma; XRD measurement; Zn target; Zn3N2; ZnO texture; annealing; crystallinity; cubic antibixbyite; direct band gaps; grain size; photoconductivity measurements; photonic device properties; polycrystalline structure; power 300 W; preferred orientation (400); reactive magnetron sputtering; rf-magnetron sputtering; surface roughness; temperature 300 degC; time 1 h; time 30 min; zinc nitride film; Annealing; Films; Optical surface waves; Photoconductivity; Rough surfaces; Surface morphology; Surface roughness;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135309
