Title :
Temperature-dependent behavior of 980 nm strained quantum well lasers
Author :
Chang-Hasnain, C.J. ; Vail, E.C. ; Nabiev, R.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Summary form only given. In this work, we present experimental and theoretical studies to explain the physical reasons for the temperature dependence of 980 nm lasers. The lasers we used are 6.5 μm wide buried heterostructure (BH) InGaAs/InGaAsP/InGaP strained quantum well (QW) separate confinement heterostructure (SCH) lasers with the regrowth of AlGaAs claddings
Keywords :
indium compounds; 6.5 mum; 980 nm; AlGaAs cladding regrowth; InGaAs-InGaAsP-InGaP; InGaAs/InGaAsP/InGaP strained QW separate confinement heterostructure lasers; buried heterostructure; physical reasons; quantum well lasers; strained quantum well lasers; temperature dependence; temperature-dependent behavior; Absorption; Charge carrier density; Fiber lasers; Laser theory; Photonic band gap; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586915
