DocumentCode
310047
Title
Temperature-dependent behavior of 980 nm strained quantum well lasers
Author
Chang-Hasnain, C.J. ; Vail, E.C. ; Nabiev, R.
Author_Institution
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
107
Abstract
Summary form only given. In this work, we present experimental and theoretical studies to explain the physical reasons for the temperature dependence of 980 nm lasers. The lasers we used are 6.5 μm wide buried heterostructure (BH) InGaAs/InGaAsP/InGaP strained quantum well (QW) separate confinement heterostructure (SCH) lasers with the regrowth of AlGaAs claddings
Keywords
indium compounds; 6.5 mum; 980 nm; AlGaAs cladding regrowth; InGaAs-InGaAsP-InGaP; InGaAs/InGaAsP/InGaP strained QW separate confinement heterostructure lasers; buried heterostructure; physical reasons; quantum well lasers; strained quantum well lasers; temperature dependence; temperature-dependent behavior; Absorption; Charge carrier density; Fiber lasers; Laser theory; Photonic band gap; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586915
Filename
586915
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