DocumentCode :
310048
Title :
Tensile-strained AlGaAs/GaAsP single quantum-well lasers
Author :
Agahi, Farid ; Baliga, Arvind ; Lau, Kei May ; Choi, Hong K. ; Anderson, Keai
Author_Institution :
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
Volume :
1
fYear :
1994
fDate :
31 Oct-3 Nov 1994
Firstpage :
109
Abstract :
Experimental and theoretical results on OMVPE grown Al0.34 Ga0.66As/GaAs1-yPy separate-confinement single quantum-well laser diodes are reported. CW output power as high as 620 mW/facet and pulsed threshold current densities (Jth) as low as 170 A/cm2 have been obtained from 90×1000 μm devices
Keywords :
aluminium compounds; 1000 mum; 620 mW; 90 mum; Al0.34Ga0.66As/GaAs1-yPy separate-confinement single quantum-well laser diodes; AlGaAs-GaAsP; AlGaAs-GaAsP QW lasers; CW output power; OMVPE grown; pulsed threshold current densities; single quantum-well lasers; tensile-strained; Diode lasers; Laboratories; Laser modes; Laser transitions; Power generation; Power lasers; Quantum well lasers; Tellurium; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
Type :
conf
DOI :
10.1109/LEOS.1994.586916
Filename :
586916
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=310048
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