• DocumentCode
    310048
  • Title

    Tensile-strained AlGaAs/GaAsP single quantum-well lasers

  • Author

    Agahi, Farid ; Baliga, Arvind ; Lau, Kei May ; Choi, Hong K. ; Anderson, Keai

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Massachusetts Univ., Amherst, MA, USA
  • Volume
    1
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    109
  • Abstract
    Experimental and theoretical results on OMVPE grown Al0.34 Ga0.66As/GaAs1-yPy separate-confinement single quantum-well laser diodes are reported. CW output power as high as 620 mW/facet and pulsed threshold current densities (Jth) as low as 170 A/cm2 have been obtained from 90×1000 μm devices
  • Keywords
    aluminium compounds; 1000 mum; 620 mW; 90 mum; Al0.34Ga0.66As/GaAs1-yPy separate-confinement single quantum-well laser diodes; AlGaAs-GaAsP; AlGaAs-GaAsP QW lasers; CW output power; OMVPE grown; pulsed threshold current densities; single quantum-well lasers; tensile-strained; Diode lasers; Laboratories; Laser modes; Laser transitions; Power generation; Power lasers; Quantum well lasers; Tellurium; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586916
  • Filename
    586916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=310048