Polarization modulation of GaAsP/AlGaAs tensilely strained quantum-well laser diodes

Author

Tanaka, Hidenao ; Shimada, Jun-ichi ; Suzuki, Yoshio

Author_Institution

NTT Interdisciplinary Res. Lab., Tokyo, Japan

Volume

1

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

111

Abstract

Summary form only given. The GaAsP-AlGaAs strained quantum-well layer wafers were grown by low-pressure metal-organic vapor phase epitaxy on Si-doped (100)-oriented GaAs substrates. The fabricated laser wafer structure with three GaAsP quantum-well active-layers is shown. The lattice mismatch between quantum-well and substrate is about 0.36%. We have demonstrated modulation at 100 MHz utilizing polarization mode switching. The modulation depth is about 9.0 dB in TM mode, with an output peak of 3 mW. This laser will be useful for optically sensing devices using polarization

Keywords

gallium arsenide; 3 mW; GaAs; GaAs:Si; GaAsP quantum-well active-layers; GaAsP-AlGaAs; GaAsP-AlGaAs strained quantum-well layer wafers; GaAsP/AlGaAs tensilely strained quantum-well laser diodes; Si-doped (100)-oriented GaAs substrates; TM mode; fabricated laser wafer structure; lattice mismatch; low-pressure metal-organic vapor phase epitaxy; modulation depth; optically sensing devices; output peak; polarization mode switching; polarization modulation; substrate; Epitaxial growth; Gallium arsenide; Laser modes; Lattices; Optical devices; Optical modulation; Optical polarization; Optical sensors; Quantum well lasers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586917

Filename

586917