High performance strained-layer InGaAs quantum well lasers grown on a (311)A GaAs substrate

Author

Takahashi, M. ; Vaccaro, P. ; Fujita, K. ; Watanabe, T. ; Egawa, T. ; Niwano, Y. ; Jimbo, T. ; Umeno, M.

Author_Institution

ATR Opt. & Radio Commun. Res. Labs., Kyoto, Japan

Volume

1

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

115

Abstract

Summary form only given. In this paper we present the photoluminescence (PL) spectrum and time-resolved PL spectrum of (311)- and (100)-oriented SLQWs, and the characteristics of (311)-oriented InGaAs/GaAs GRIN-SCH SLQW lasers. To the best of our knowledge, this is the first room temperature operation of low threshold-current density and high power InGaAs QW lasers grown on (311)A GaAs substrates

Keywords

indium compounds; (100)-oriented; (311)-oriented; (311)A GaAs substrate; (311)A GaAs substrates; GaAs; InGaAs; InGaAs/GaAs GRIN-SCH SLQW lasers; high performance strained-layer InGaAs quantum well lasers; high power InGaAs QW lasers; low threshold-current density; photoluminescence spectrum; room temperature operation; time-resolved PL spectrum; Gallium arsenide; Indium gallium arsenide; Optical harmonic generation; Photoluminescence; Pulse measurements; Quantum well lasers; Radiative recombination; Substrates; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586919

Filename

586919