Title :
Absorption in biased AlxGa1−xN/GaN quantum wells
Author :
Chou, HungChi ; Anwar, Mehdi ; Manzur, Tariq ; Zeller, John ; Sood, Ashok K.
Author_Institution :
Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
Abstract :
We report the calculated absorption coefficient in AlxGa1-xN/GaN quantum well. The calculations account for spontaneous and piezoelectric polarizations and strain induced modifications in band gap and band offsets. The dependence of absorption coefficient and carrier life time on the variations of applied voltage, energy and Al-mole fraction is report in the presence of strain.
Keywords :
III-V semiconductors; absorption coefficients; aluminium compounds; carrier lifetime; dielectric polarisation; energy gap; gallium compounds; piezoelectric semiconductors; piezoelectricity; semiconductor quantum wells; Al-mole fraction; AlxGa1-xN-GaN; absorption coefficient; applied voltage; band gap; band offsets; biased quantum wells; carrier lifetime; piezoelectric polarization; spontaneous polarization; strain induced modifications; Absorption; Charge carrier processes; Educational institutions; Gallium nitride; Materials; USA Councils; Wave functions;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135311
