Title :
Waveguide-coupled nanolasers in III–V membranes on silicon
Author :
Dolores-Calzadilla, Victor ; Heiss, Dominik ; Fiore, A. ; Smit, Meint
Author_Institution :
Dept. of Electr. Eng., Eindhoven Univ. of Technol., Eindhoven, Netherlands
Abstract :
Semiconductor nanolasers provide an attractive route towards high density photonic integrated circuits in low power applications such as optical interconnects. In this paper we present the concept of a waveguide-coupled nanolaser for integration in a CMOS compatible photonic platform. We exploit metallic and dielectric confinement to provide high quality factors exceeding 500 in a wavelength-scale cavity, that provides efficient cooling and cross-talk immunity due to the metal coverage. We present simulations detailing the design considerations for high quality factors and efficient waveguide coupling. Optical and electrical simulations predict room temperature operation at 1.55 μm with a threshold current of 120 μA and a differential quantum efficiency of 0.16. We also discuss briefly the challenges of fabricating these devices and integrating them in the photonic platform.
Keywords :
CMOS integrated circuits; III-V semiconductors; Q-factor; elemental semiconductors; integrated optoelectronics; low-power electronics; membranes; nanophotonics; optical couplers; semiconductor lasers; silicon; waveguide lasers; CMOS integrated circuit; Si; current 120 muA; dielectric confinement; differential quantum efficiency; electrical simulation; low power applications; metallic confinement; optical simulation; photonic integrated circuits; quality factor; waveguide coupled nanolaser; wavelength 1.55 mum; wavelength scale cavity; Cavity resonators; Integrated optics; Optical device fabrication; Optical waveguides; Photonics; Q-factor; Semiconductor lasers; III–V membrane; metallo-dielectric lasers; nanolasers; nanophotonics; photonic circuits;
Conference_Titel :
Transparent Optical Networks (ICTON), 2013 15th International Conference on
Conference_Location :
Cartagena
DOI :
10.1109/ICTON.2013.6603020