Photosensitivity analysis of n-ZnO/p-SiC heterojunction structures

Among the wide band gap semiconductor materials that have drawn a lot of attention recently, ZnO and SiC are seriously considered as materials for emerging electronics applications. ZnO has received attention for its application for UV light-emitters, transparent high power electronics, sensors, piezo electric transducers, and solar cells, because of its high chemical stability, non-toxicity, low cost and high optical band gap of ~3.37 eV. 4H-SiC has very a small lattice mismatch to ZnO (~5%), a wide band gap (~3.2 eV) with excellent thermal properties, and thus suitable for applications such as optoelectronic, high-power, high-frequency, and high-temperature devices. In addition, its useful properties include the existence of the availability of large area substrate, and a high electron saturation velocity.