DocumentCode
310056
Title
Optimization of T0 in GaAs/(Al,Ga)As, multiple-quantum-well GRINSCH lasers
Author
Dion, M. ; Li, Z.M. ; Ross, D. ; Chatenoud, F. ; Williams, R.L.
Author_Institution
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Volume
1
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
125
Abstract
Although it has been known for many years that GaAs/AlGaAs quantum-well (QW) lasers exhibit low temperature sensitivity, or high characteristic temperatures, T0, to our knowledge, optimization of the laser structure so as to maximize T0 has never been shown. Previous work in GaAs/AlGaAs has been limited in scope, either only to Al content in the cladding layers and QW thickness, or to a small variety of numbers of quantum wells, n. There has also been work done on the influence of the number of wells in InP-based lasers at 1.3 μm and 1.5 μm wavelengths. In this paper, we present results of an experimental study on the variation of T0 in graded-index, separate-confinement heterostructure GaAs/(Al,Ga)As QW lasers as a function of the Al content in the cladding layers at two different nominal values, and of the number of wells, ranging from n=l to 10
Keywords
quantum well lasers; GRINSCH lasers; GaAs-AlGaAs; GaAs/(Al,Ga)As laser; InP-based lasers; characteristic temperatures; cladding layers; graded-index separate-confinement heterostructure laser; laser structure; multiple-quantum-well lasers; optimization; quantum wells; Gallium arsenide; Laser theory; Pulse measurements; Quantum well devices; Quantum well lasers; Solid lasers; Solid state circuits; Temperature distribution; Temperature sensors; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586924
Filename
586924
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