Title :
Optimization of T0 in GaAs/(Al,Ga)As, multiple-quantum-well GRINSCH lasers
Author :
Dion, M. ; Li, Z.M. ; Ross, D. ; Chatenoud, F. ; Williams, R.L.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
31 Oct-3 Nov 1994
Abstract :
Although it has been known for many years that GaAs/AlGaAs quantum-well (QW) lasers exhibit low temperature sensitivity, or high characteristic temperatures, T0, to our knowledge, optimization of the laser structure so as to maximize T0 has never been shown. Previous work in GaAs/AlGaAs has been limited in scope, either only to Al content in the cladding layers and QW thickness, or to a small variety of numbers of quantum wells, n. There has also been work done on the influence of the number of wells in InP-based lasers at 1.3 μm and 1.5 μm wavelengths. In this paper, we present results of an experimental study on the variation of T0 in graded-index, separate-confinement heterostructure GaAs/(Al,Ga)As QW lasers as a function of the Al content in the cladding layers at two different nominal values, and of the number of wells, ranging from n=l to 10
Keywords :
quantum well lasers; GRINSCH lasers; GaAs-AlGaAs; GaAs/(Al,Ga)As laser; InP-based lasers; characteristic temperatures; cladding layers; graded-index separate-confinement heterostructure laser; laser structure; multiple-quantum-well lasers; optimization; quantum wells; Gallium arsenide; Laser theory; Pulse measurements; Quantum well devices; Quantum well lasers; Solid lasers; Solid state circuits; Temperature distribution; Temperature sensors; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586924
