Title :
Ballistic and high field transport in a nano-MOSFET
Author :
Riyadi, Munawar A. ; Arora, Vijay K.
Abstract :
The ballistic transport has been extensively discussed for years in search for enhancement of device and circuit performance. The device performance is expected to improve as channel length is reduced below the scattering-limited mean free path. High mobilities are more susceptible to degradation. The critical voltage Vcn and Vc play a predominant role in defining whether or not high-field effects are present. The criteria to unscramble ballistic effects from high-field effects will be presented.
Keywords :
MOSFET; ballistic transport; carrier mean free path; high field effects; nanoelectronics; ballistic transport; channel length; circuit performance; degradation susceptibility; device performance; high field transport; high-field effect; nanoMOSFET; scattering-limited mean free path; Ballistic transport; Degradation; Educational institutions; MOSFET circuits; Nanoscale devices; Physics; USA Councils;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135315
