DocumentCode :
3100806
Title :
State of the art GIS technology and trends
Author :
Rudenko, P. ; Wallner, C. ; Behne, M.
Author_Institution :
Siemens AG, Erlangen, Germany
fYear :
2012
fDate :
7-10 May 2012
Firstpage :
1
Lastpage :
5
Abstract :
Modern gas insulated switchgears (GIS) technology has undergone continuous development since its introduction in the 1960´s, when the use of sulphur-hexafluoride (SF6) gas was first introduced as an insulating and arc extinguishing medium. With the use of SF6, the world´s first high voltage gas insulated switchgear was introduced into the market in 1968. Whilst many may consider this technology as mature, there have been continuous development-driven changes in GIS design, manufacture, test and operation. Consistent research and innovative development led to the nowadays compact and overall optimized switchgear. Today, GIS technology consists typically of a modular design and is filled with a minimum of SF6. The standardized structure is made to match various customers´ specifications and allows realizing almost all substation configurations accordingly. Furthermore, it offers low life cycle costs and can be used for indoor and outdoor applications. What trends have shaped the GIS of today, and which will determine how GIS will further evolve into the future in terms of design, manufacture, test, and operation throughout its life cycle? What are the customers´ visions and what are the manufacturers´ answers?
Keywords :
SF6 insulation; arcs (electric); gas insulated substations; gas insulated switchgear; life cycle costing; GIS technology; SF6 gas; arc extinguishing medium; gas insulated switchgear technology; insulating medium; life cycle costing; modular design; substation; sulphur-hexafluoride gas; Circuit breakers; Market research; Materials; Substations; Sulfur hexafluoride; Evolution of high voltage gas insulated switchgear (GIS); state of the art GIS; trends of GIS technology development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transmission and Distribution Conference and Exposition (T&D), 2012 IEEE PES
Conference_Location :
Orlando, FL
ISSN :
2160-8555
Print_ISBN :
978-1-4673-1934-8
Electronic_ISBN :
2160-8555
Type :
conf
DOI :
10.1109/TDC.2012.6281403
Filename :
6281403
Link To Document :
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