Intra valence band transitions near 2.5 μm for normal incidence nonlinear frequency conversion

Author

Vartanian, Bartev J. ; Harris, James S., Jr.

Author_Institution

Solid State Lab., Stanford Univ., CA, USA

Volume

1

fYear

1994

fDate

31 Oct-3 Nov 1994

Firstpage

184

Abstract

Summary form only given. We demonstrate intersubband absorption in p-type InGaAs-AlAs QWs at normal incidence for light polarized along the (100) direction between two heavy hole (HH) states and between HH and spin orbit split off hole (SO) states. To the best of our knowledge, such transitions between HH and SO states have not been reported in quantum wells. Our transition energies range from 260-540 meV (4.8-2.3 μm). These transitions could be used for frequency conversion

Keywords

indium compounds; (100) direction; 2.5 mum; 260 to 540 meV; 4.8 to 2.3 mum; InGaAs-AlAs; heavy hole states; intersubband absorption; intra valence band transitions; light polarized; normal incidence; normal incidence nonlinear frequency conversion; optical frequency conversion; p-type InGaAs-AlAs QWs; spin orbit split off hole states; transition energies; Absorption; Buffer layers; Capacitive sensors; Frequency conversion; Gallium arsenide; Geometry; Indium; Lattices; Optical polarization; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-1470-0

Type

conf

DOI

10.1109/LEOS.1994.586953

Filename

586953