New latch-up model for deep sub-micron integrated circuit

Withscaling applications in the aerospace technology of the large-scale CMOS integrated circuit, the reliability of CMOS device has been the key factor which guarantees the normal work of aerospace equipment. Due to the high-energy particles surrounding the Earth captured by the radiation belt, the CMOS circuits may be hit by them when the aerospace equipment are running around the earth, which may cause single event effects(SEEs). SEEs can make the circuits work abnormally, or even cause serious incidents. Thus it is important to study the influence of SEEs on the CMOS circuit reliability.