DocumentCode
3100955
Title
A proposition for CaNAs/CaNP quantum well laser diodes formed on Si wafers with excellent high-tempe
Author
Kondow, M. ; Uomi, K.
fYear
1995
fDate
10-14 July 1995
Firstpage
48
Keywords
Diode lasers; Electron optics; Lattices; Light scattering; Optical materials; Optical scattering; Particle scattering; Photonic band gap; Temperature; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 1995. Technical Digest. CLEO/Pacific Rim'95., Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-2400-5
Type
conf
DOI
10.1109/CLEOPR.1995.521271
Filename
521271
Link To Document