DocumentCode :
3100955
Title :
A proposition for CaNAs/CaNP quantum well laser diodes formed on Si wafers with excellent high-tempe
Author :
Kondow, M. ; Uomi, K.
fYear :
1995
fDate :
10-14 July 1995
Firstpage :
48
Keywords :
Diode lasers; Electron optics; Lattices; Light scattering; Optical materials; Optical scattering; Particle scattering; Photonic band gap; Temperature; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 1995. Technical Digest. CLEO/Pacific Rim'95., Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-2400-5
Type :
conf
DOI :
10.1109/CLEOPR.1995.521271
Filename :
521271
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3100955
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