Title :
A physical model for scaling and optimizing layers structure of InGaAs/InP double heterojunction bipolar transistors based on hydrodynamic simulation
Author :
Ge, Ji ; Liu, Hong-Gang ; Cao, Yu-Xiong ; Su, Yong-Bo ; Jin, Zhi
Author_Institution :
Inst. of Microelectron., Beijing, China
Abstract :
Currently the most popular HBT model are unscalable and cannot be used for device structure optimization which must primarily be calibrated with already fabricated and measured devices. To overcome the problem, a physical model for scaling and optimizing layers structure of InGaAs/InP double heterojunction bipolar transistors (DHBTs) based on hydrodynamic simulation is developed in this paper.
Keywords :
III-V semiconductors; circuit optimisation; gallium arsenide; heterojunction bipolar transistors; hydrodynamics; indium compounds; InGaAs-InP; device structure optimization; double heterojunction bipolar transistor; hydrodynamic simulation; layer structure optimization; layer structure scaling; physical model; Cutoff frequency; Double heterojunction bipolar transistors; Equations; Hydrodynamics; Indium gallium arsenide; Indium phosphide; Mathematical model;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135330
