• DocumentCode
    3101060
  • Title

    GIDL and F-N tunneling current correction on charge pumping techniques for profiling traps in high-k gated MOSFETs

  • Author

    Lu, Chun-Chang ; Chang-Liao, Kuei-Shu ; Tsai, Fu-Huan ; Tsao, Che-Hao ; Wang, Tien-Ko ; Hou, Fu-Chung ; Hsu, Yao-Tung

  • Author_Institution
    Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In summary, the impact of parasitic leakage component (including GIDL and F-N gate leakage current) on CP measurements has been investigated and two methods were proposed to overcome this issue, based on the eliminating of static leakage current. The lateral and depth profiles of trap distribution in high-k MOSFETs are extracted by the corrected CP techniques.
  • Keywords
    MOSFET; high-k dielectric thin films; leakage currents; CP measurements; F-N tunneling current correction; charge pumping techniques; depth profiles; gate leakage current; gate-induced-drain-leakage; high-k gated MOSFET; lateral profiles; parasitic leakage component; profiling traps; static leakage current elimination; Current measurement; Frequency measurement; Leakage current; Logic gates; MOSFETs; Tunneling; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135335
  • Filename
    6135335
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3101060