Highly reproducible 980- and 780-nm VCSEL´s grown by GSMBE

Summary form only given. We report the growth of 980- and 780-nm vertical cavity surface emitting lasers (VCSEL´s) by gas-source molecular beam epitaxy (GSMBE), in which the pyrometric interferometry technique is used for in-situ monitoring and feedback control of layer thickness to obtain a highly reproducible distributed Bragg reflectors (DBR) for VCSEL structures. This technique uses an optical pyrometer to measure emissivity oscillations of the growing epi-layer surface. The growing layer thickness can then be related to the emissivity oscillation signals. When the layer reaches the desired thickness, the growth of the subsequent layer is then initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the Fabry-Perot resonance at the desired wavelength is reproducibly obtained